Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 directionTEYS, S. A; ROMANYUK, K. N; OLSHANETSKY, B. Z et al.Journal of crystal growth. 2014, Vol 404, pp 39-43, issn 0022-0248, 5 p.Article

Ge and GexSi1―x islands formation on GexSi1―x solid solution surfaceNIKIFOROV, A. I; TIMOFEEV, V. A; TEYS, S. A et al.Thin solid films. 2012, Vol 520, Num 8, pp 3319-3321, issn 0040-6090, 3 p.Conference Paper

Edge-dimer row : the reason of three-bilayer steps and islands stability on Si(111)-7×7NEIZVESTNY, I. G; ROMANYUK, K. N; SHWARTZ, N. L et al.Surface science. 2006, Vol 600, Num 15, pp 3079-3086, issn 0039-6028, 8 p.Article

Surface morphology transitions induced by ion beam action during Ge/Si MBEDVURECHENSKII, A. V; SMAGINA, J. V; ZINOVYEV, V. A et al.SPIE proceedings series. 2004, pp 290-297, isbn 0-8194-5324-2, 8 p.Conference Paper

Orientation and structure of triple step staircase on vicinal Si(111) surfacesTEYS, S. A; ROMANYUK, K. N; ZHACHUK, R. A et al.Surface science. 2006, Vol 600, Num 21, pp 4878-4882, issn 0039-6028, 5 p.Article

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxyDVURECHENSKII, A. V; SMAGINA, J. V; GROETZSCHEL, R et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 25-29, issn 0257-8972, 5 p.Conference Paper

Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surfaceZHACHUK, R. A; TEYS, S. A; DOLBAK, A. E et al.Surface science. 2004, Vol 565, Num 1, pp 37-44, issn 0039-6028, 8 p.Article

Effect of nickel on clean silicon surfaces: transport and structureDOLBAK, A. E; OLSHANETSKY, B. Z; STENIN, S. I et al.Surface science. 1989, Vol 218, Num 1, pp 37-54, issn 0039-6028Article